Samsung has announced the first production of chips for ultra-high speed of 4 GB, which offer roughly twice the performance of processors currently used. Surocreana is using the 20 nm technology and promises a battery saving 20 percent.
The new mobile LPDDR3 4GB DRAM chip enables performance levels comparable to the standard DRAM used in PCs, and therefore is best suited for multimedia demands of next generation mobile devices such as smartphones or ‘tablets’ .
“The chip provides a more efficient mobile memory, art and a very large data capacity, enabling OEMs to introduce innovative designs on the market,” said executive vice president of memory sales and marketing Samsung Electronics, Young-Hyun Jun
“Our class 20nm chip and 4Gb mobile DRAM is another example of our ability to offer distinct memory and high performance, high density for customers at the right time,” he said Jun.
The chip can transmit data at speeds up to 2.133 Mbps, more than double the previous memory performance standard mobile DRAM (LPDDR2). Compared LPDDR3 30nm class DRAM chips, the new device produces more than 30 percent improvement in yield and 20 percent savings in energy consumption.
The small thickness of the chip allows it to adapt to the terminals without difficulty and without taking up much space.Batteries tend to be increasingly large and fine them a chip helps the cell structure from widening too. Samsung plans to increase production of its 20nm-class mobile DRAM later this year, strengthening its competitiveness as a leader in the memory industry.
The market in which Samsung claim frame this development is increasingly important since according to research firm, Gartner, is expected to DRAM market grow by 13 percent year over year to reach $ 29.6 million (23 million euros) in the U.S. in 2013. Hence the importance that Samsung gives this type of chips, which can make a significant improvement in the sector.